Bunker, K.L., R. Garcia, P.E. Russell, “Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Quantum-Well Light-Emitting Diode”, GaN, AIN, InN and Their Alloys: 2004, presented to Materials Research Society, Boston, MA, 2004; and Applied Physics Letters, Vol. 86, No. 8, pp. 1-3, February 2005; presented to Microscopy & Microanalysis, July 2005.
InGaN-based light emitting diodes (LEDs) and laser diodes (LDs) have great commercial potential due to their ability of working in the short wavelength region, which has up to now been inaccessible for LED and LD technologies. The active region of these devices in which the light is being generated is an InGaN-based quantum well. By improving our understanding of these mechanisms, it is possible to improve the structural design, and with it, the performance of the devices.